N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 onsemi FCH125N65S3R0-F155
- RS Stock No.:
- 178-4649
- Mfr. Part No.:
- FCH125N65S3R0-F155
- Brand:
- onsemi
1 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 2)
$10.465
(exc. GST)
$11.511
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 6 | $10.465 | $20.93 |
| 8 - 14 | $10.21 | $20.42 |
| 16 + | $10.065 | $20.13 |
*price indicative
- RS Stock No.:
- 178-4649
- Mfr. Part No.:
- FCH125N65S3R0-F155
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150 oC
Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
Ultra Low Gate Charge (Typ. Qg = 46 nC)
Optimized Capacitance
Typ. RDS(on) = 105 mΩ
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
UPS / Solar
LED Lighting / Ballast
Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
Ultra Low Gate Charge (Typ. Qg = 46 nC)
Optimized Capacitance
Typ. RDS(on) = 105 mΩ
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
UPS / Solar
LED Lighting / Ballast
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 24 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 125 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 181 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 4.82mm |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V |
| Length | 15.87mm |
| Minimum Operating Temperature | -55 °C |
| Height | 20.82mm |
| Forward Diode Voltage | 1.2V |
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