N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC Vishay Siliconix SiDR392DP-T1-GE3

RS Stock No.:: 178-3670
Mfr. Part No.:: SiDR392DP-T1-GE3
Brand:: Vishay Siliconix

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC Vishay Siliconix SiDR392DP-T1-GE3

3000 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 3000)

$1.957

(exc. GST)

$2.153

(inc. GST)

Units	Per unit	Per Reel*
3000 - 12000	$1.957	$5,871.00
15000 +	$1.761	$5,283.00

*price indicative

RS Stock No.:: 178-3670
Mfr. Part No.:: SiDR392DP-T1-GE3
Brand:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK SO-8DC
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	900 μΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	+20 V, +6 V
Typical Gate Charge @ Vgs	125 nC @ 10 V
Maximum Operating Temperature	+150 °C
Width	5mm
Transistor Material	Si
Length	5.99mm
Number of Elements per Chip	1
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C
Height	1.07mm

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC Vishay Siliconix SiDR392DP-T1-GE3

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