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    N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

    On back order for despatch 31/08/2024, delivery within 10 working days from despatch date.
    Units

    Price (ex. GST) Each (In a Pack of 10)

    $1.445

    (exc. GST)

    $1.589

    (inc. GST)

    Units
    Per unit
    Per Pack*
    10 - 740$1.445$14.45
    750 - 1490$1.409$14.09
    1500 +$1.387$13.87

    *price indicative

    Packaging Options:
    RS Stock No.:
    178-3920
    Mfr. Part No.:
    SiSS12DN-T1-GE3
    Brand:
    Vishay Siliconix

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN
    Attribute
    Value
    Channel TypeN
    Maximum Continuous Drain Current60 A
    Maximum Drain Source Voltage40 V
    SeriesTrenchFET
    Package TypePowerPAK 1212-8
    Mounting TypeSurface Mount
    Pin Count8
    Maximum Drain Source Resistance2 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage1.1V
    Minimum Gate Threshold Voltage2.4V
    Maximum Power Dissipation65.7 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-16 V, +20 V
    Transistor MaterialSi
    Maximum Operating Temperature+150 °C
    Typical Gate Charge @ Vgs59 nC @ 10 V
    Number of Elements per Chip1
    Width3.15mm
    Length3.15mm
    Height1.07mm
    Forward Diode Voltage1.1V
    Minimum Operating Temperature-55 °C

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