onsemi Dual NVMFD5C680NL 2 Type N-Channel MOSFET, 26 A, 60 V Enhancement, 8-Pin DFN
- RS Stock No.:
- 172-3320
- Mfr. Part No.:
- NVMFD5C680NLT1G
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1500 units)*
$1,938.00
(exc. GST)
$2,131.50
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 1,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 - 1500 | $1.292 | $1,938.00 |
| 3000 - 4500 | $1.26 | $1,890.00 |
| 6000 + | $1.241 | $1,861.50 |
*price indicative
- RS Stock No.:
- 172-3320
- Mfr. Part No.:
- NVMFD5C680NLT1G
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | NVMFD5C680NL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 19W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Width | 5.1 mm | |
| Length | 6.1mm | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series NVMFD5C680NL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 19W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Width 5.1 mm | ||
Length 6.1mm | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
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