onsemi Dual NVMFD5C466NL 2 N-Channel Power MOSFET, 52 A, 40 V Enhancement, 8-Pin DFN
- RS Stock No.:
- 172-3314
- Mfr. Part No.:
- NVMFD5C466NLT1G
- Brand:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 172-3314
- Mfr. Part No.:
- NVMFD5C466NLT1G
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Configuration | Dual | |
| Series | NVMFD5C466NL | |
| Number of Elements per Chip | 2 | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current (Id) | 52 A | |
| Maximum Drain Source Voltage (Vds) | 40 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | DFN | |
| Automotive Standard | AEC-Q101 | |
| Forward Voltage (Vf) | 900 mV | |
| Height | 1.05 mm | |
| Length | 6.1 mm | |
| Maximum Drain Source Resistance (Rds) | 7.4 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 40 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | PPAP capable, AEC-Q101, RoHS | |
| Typical Gate Charge (Qg) @ Vgs | 16 nC | |
| Width | 5.1 mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Configuration Dual | ||
Series NVMFD5C466NL | ||
Number of Elements per Chip 2 | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current (Id) 52 A | ||
Maximum Drain Source Voltage (Vds) 40 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type DFN | ||
Automotive Standard AEC-Q101 | ||
Forward Voltage (Vf) 900 mV | ||
Height 1.05 mm | ||
Length 6.1 mm | ||
Maximum Drain Source Resistance (Rds) 7.4 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 40 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals PPAP capable, AEC-Q101, RoHS | ||
Typical Gate Charge (Qg) @ Vgs 16 nC | ||
Width 5.1 mm | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
Related links
- onsemi Dual NVMFD5C466NL 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN NVMFD5C466NLT1G
- onsemi Dual NVMFD5C466NL 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual NVMFD5C466NL 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin DFN NVMFD5C466NLWFT1G
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin DFN