Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TSON

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Subtotal (1 reel of 5000 units)*

$3,750.00

(exc. GST)

$4,100.00

(inc. GST)

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Units
Per unit
Per Reel*
5000 - 5000$0.75$3,750.00
10000 - 45000$0.735$3,675.00
50000 +$0.662$3,310.00

*price indicative

RS Stock No.:
171-2208
Mfr. Part No.:
TPN2R304PL
Brand:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Package Type

TSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

175°C

Width

3.1 mm

Length

3.1mm

Standards/Approvals

No

Height

0.85mm

Automotive Standard

No

RoHS Status: Exempt

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

High-speed switching

Small gate charge: QSW = 10.8 nC (typ.)

Small output charge: Qoss = 27 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.3 mA)

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