- RS Stock No.:
- 170-2265
- Mfr. Part No.:
- IRF7343TRPBF
- Brand:
- Infineon
On back order for despatch 29/07/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 4000)
$0.689
(exc. GST)
$0.758
(inc. GST)
Units | Per unit | Per Reel* |
4000 - 16000 | $0.689 | $2,756.00 |
20000 + | $0.62 | $2,480.00 |
*price indicative |
- RS Stock No.:
- 170-2265
- Mfr. Part No.:
- IRF7343TRPBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Non Compliant
Product Details
Dual N/P-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Benefits:
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
Dual N and P-Channel MOSFET
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
Dual N and P-Channel MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N, P |
Maximum Continuous Drain Current | 3.4 A, 4.7 A |
Maximum Drain Source Voltage | 55 V |
Package Type | SO-8 |
Series | IRF7343PbF |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 0.065 Ω, 0.17 Ω |
Channel Mode | Depletion |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 2 W |
Maximum Gate Source Voltage | 20 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 5mm |
Typical Gate Charge @ Vgs | 2.3 nC @ 10 V, 24 nC @ 10 V |
Width | 4mm |
Height | 1.5mm |
Forward Diode Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |