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N/P-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO Infineon IRF7343TRPBF

12000 In stock for delivery within 7 working day(s)
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Price (ex. GST) Each (On a Reel of 4000)


(exc. GST)


(inc. GST)



RS Stock No.:
Mfr. Part No.:

Non Compliant

unitsPer unitPer Reel*
4000 - 4000$0.533$2,132.00
8000 - 8000$0.504$2,016.00
12000 +$0.467$1,868.00
*price indicative

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
Dual N and P-Channel MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Channel TypeN, P
Maximum Continuous Drain Current3.4 A, 4.7 A
Maximum Drain Source Voltage55 V
Package TypeSO
Mounting TypeSurface Mount
Pin Count8
Maximum Drain Source Resistance0.065 Ω, 0.17 Ω
Channel ModeDepletion
Minimum Gate Threshold Voltage1V
Maximum Power Dissipation2 W
Maximum Gate Source Voltage20 V
Number of Elements per Chip1
Typical Gate Charge @ Vgs2.3 nC @ 10 V, 24 nC @ 10 V
Maximum Operating Temperature+150 °C
Forward Diode Voltage1.2V
Minimum Operating Temperature-55 °C