Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

$1,864.00

(exc. GST)

$2,052.00

(inc. GST)

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Last RS stock
  • Final 4,000 unit(s), ready to ship from another location
Units
Per unit
Per Reel*
4000 - 4000$0.466$1,864.00
8000 - 36000$0.454$1,816.00
40000 +$0.408$1,632.00

*price indicative

RS Stock No.:
170-2264
Mfr. Part No.:
SI4435DYTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

30V

Series

Si4435DYPbF

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

40nC

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Width

4 mm

Length

5mm

Height

1.5mm

Standards/Approvals

No

Automotive Standard

No

Non Compliant

The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from International Rectifier utilize Advanced processing techniques to achieve the extremely low on-resistance per silicon area.

P-channel MOSFET

Surface mount

Available in tape and reel

Lead free

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