N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STMicroelectronics STW28N60M2

RS Stock No.:: 168-8078
Mfr. Part No.:: STW28N60M2
Brand:: STMicroelectronics

N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STMicroelectronics STW28N60M2

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Added

Price (ex. GST) Each (In a Tube of 30)

$5.19

(exc. GST)

$5.71

(inc. GST)

Units	Per unit	Per Tube*
30 - 120	$5.19	$155.70
150 +	$4.67	$140.10
*price indicative

RS Stock No.:: 168-8078
Mfr. Part No.:: STW28N60M2
Brand:: STMicroelectronics

Technical data sheets

STB28N60M2, STP28N60M2, STW28N60M2, N-Channel 600V, 0.135 Ohm typ., 22A MDmesh II Plus Low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 Packages
ESD Control Selection Guide V1

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, STMicroelectronics

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	22 A
Maximum Drain Source Voltage	650 V
Series	MDmesh M2
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	170 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Length	15.75mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	5.15mm
Typical Gate Charge @ Vgs	36 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	20.15mm