N-Channel MOSFET, 198 A, 40 V DirectFET ISOMETRIC Infineon IRF7946TRPBF

RS Stock No.:: 168-5976
Mfr. Part No.:: IRF7946TRPBF
Brand:: Infineon

N-Channel MOSFET, 198 A, 40 V DirectFET ISOMETRIC Infineon IRF7946TRPBF

This image is representative of the product range

68 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 4800)

$1.678

(exc. GST)

$1.846

(inc. GST)

Units	Per unit	Per Reel*
4800 - 19200	$1.678	$8,054.40
24000 +	$1.51	$7,248.00

*price indicative

RS Stock No.:: 168-5976
Mfr. Part No.:: IRF7946TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low R_DS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	198 A
Maximum Drain Source Voltage	40 V
Package Type	DirectFET ISOMETRIC
Series	DirectFET
Mounting Type	Surface Mount
Maximum Drain Source Resistance	1.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.2V
Maximum Power Dissipation	96 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	6.35mm
Width	5.05mm
Typical Gate Charge @ Vgs	141 nC @ 20 V
Height	0.53mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V