N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK Infineon IPD60R800CEAUMA1

RS Stock No.:: 168-5913
Mfr. Part No.:: IPD60R800CEAUMA1
Brand:: Infineon

N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK Infineon IPD60R800CEAUMA1

This image is representative of the product range

On back order for despatch 09/07/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 2500)

$0.499

(exc. GST)

$0.549

(inc. GST)

Units	Per unit	Per Reel*
2500 - 10000	$0.499	$1,247.50
12500 +	$0.449	$1,122.50

*price indicative

RS Stock No.:: 168-5913
Mfr. Part No.:: IPD60R800CEAUMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon CoolMOS™ CE Power MOSFET

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	8.4 A
Maximum Drain Source Voltage	650 V
Package Type	DPAK (TO-252)
Series	CoolMOS™ CE
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	800 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	74 W
Maximum Gate Source Voltage	-30 V, +30 V
Width	6.22mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	17.2 nC @ 10 V
Length	6.73mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-40 °C
Height	2.41mm
Forward Diode Voltage	0.9V