Infineon CoolMOS CE N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1
- RS Stock No.:
- 168-5910
- Mfr. Part No.:
- IPD60R1K0CEAUMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
$920.00
(exc. GST)
$1,012.50
(inc. GST)
FREE delivery for orders over $80.00 ex GST
Temporarily out of stock
- Shipping from 27 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | $0.368 | $920.00 |
| 12500 + | $0.332 | $830.00 |
*price indicative
- RS Stock No.:
- 168-5910
- Mfr. Part No.:
- IPD60R1K0CEAUMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 61W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 61W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon CoolMOS™ CE Series MOSFET, 6.8A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IPD60R1K0CEAUMA1
This high-voltage MOSFET is designed to improve performance in various power applications. It is suitable for systems requiring robust switching capabilities and serves sectors such as automation and electronics. The CoolMOS technology employs superjunction principles, ensuring efficiency and reliability under diverse operating conditions.
Features & Benefits
• Reduction in switching and conduction losses enhances efficiency
• Robust body diode withstands hard commutation for increased reliability
• Low gate charge characteristics simplify driver requirements during operation
• Enhanced ESD robustness promotes durability in challenging environments
• Suitable for both hard and soft switching applications optimises performance
Applications
• Utilised in power factor correction stages for effective energy management
• Employed in hard switching PWM stages for efficient power conversion and control
• Integrates seamlessly within resonant switching stages across various device
• Suitable for multiple sectors including lighting, servers, and telecom equipment
How does the switching behaviour impact energy efficiency during operation?
Switching behaviour is important as lower switching losses contribute to higher overall efficiency, leading to cooler operation and reduced heat generation, which supports system longevity.
What protective measures are recommended during installation?
Using ferrite beads on Gates or separate totem poles is advisable to reduce ringing and ensure stable operation during switching.
Can it operate effectively under extreme temperature conditions?
The MOSFET is rated for operation between -40°C and +150°C, enabling reliable functionality in various environmental conditions.
What considerations should be taken when paralleling multiple devices?
For effective paralleling, proper gate drive techniques should be employed to achieve balanced current distribution among the devices and optimise performance.
What implications do the maximum ratings have for system design?
Understanding maximum ratings such as continuous drain current and voltage limits is Crucial in system design to avoid exceeding those thresholds, ensuring performance and reliability in applications.
Related links
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD65R1K0CEAUMA1
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-251