N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STMicroelectronics STW70N60DM2

RS Stock No.:: 168-5904
Mfr. Part No.:: STW70N60DM2
Brand:: STMicroelectronics

N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STMicroelectronics STW70N60DM2

This image is representative of the product range

On back order for despatch 22/02/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each (In a Tube of 30)

$16.422

(exc. GST)

$18.064

(inc. GST)

Units	Per unit	Per Tube*
30 - 30	$16.422	$492.66
60 - 90	$16.011	$480.33
120 +	$15.764	$472.92

*price indicative

RS Stock No.:: 168-5904
Mfr. Part No.:: STW70N60DM2
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, STMicroelectronics

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	600 V
Series	MDmesh DM2
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	42 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	446 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	15.75mm
Number of Elements per Chip	1
Width	5.15mm
Typical Gate Charge @ Vgs	121 nC @ 10 V
Height	20.15mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.6V