N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STMicroelectronics STW56N60DM2

RS Stock No.:: 168-5902
Mfr. Part No.:: STW56N60DM2
Brand:: STMicroelectronics

N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STMicroelectronics STW56N60DM2

This image is representative of the product range

On back order for despatch 05/07/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each (In a Tube of 30)

$16.451

(exc. GST)

$18.096

(inc. GST)

Units	Per unit	Per Tube*
30 - 120	$16.451	$493.53
150 +	$14.806	$444.18

*price indicative

RS Stock No.:: 168-5902
Mfr. Part No.:: STW56N60DM2
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, STMicroelectronics

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	50 A
Maximum Drain Source Voltage	600 V
Series	MDmesh DM2
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	360 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Operating Temperature	+150 °C
Length	15.75mm
Width	5.15mm
Typical Gate Charge @ Vgs	90 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Forward Diode Voltage	1.6V
Minimum Operating Temperature	-55 °C
Height	20.15mm