N-Channel MOSFET, 15.7 A, 100 V, 3-Pin DPAK onsemi FDD850N10L

RS Stock No.:: 166-3425
Mfr. Part No.:: FDD850N10L
Brand:: onsemi

N-Channel MOSFET, 15.7 A, 100 V, 3-Pin DPAK onsemi FDD850N10L

This image is representative of the product range

1840 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 2500)

$0.743

(exc. GST)

$0.817

(inc. GST)

Units	Per unit	Per Reel*
2500 - 2500	$0.743	$1,857.50
5000 - 7500	$0.724	$1,810.00
10000 +	$0.713	$1,782.50

*price indicative

RS Stock No.:: 166-3425
Mfr. Part No.:: FDD850N10L
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	15.7 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Series	PowerTrench
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	96 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	50 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	22.2 nC @ 10 V
Transistor Material	Si
Length	6.73mm
Width	6.22mm
Number of Elements per Chip	1
Height	2.39mm
Minimum Operating Temperature	-55 °C