N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK onsemi FQD13N10LTM

RS Stock No.:: 166-2636
Mfr. Part No.:: FQD13N10LTM
Brand:: onsemi

N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK onsemi FQD13N10LTM

This image is representative of the product range

On back order for despatch 03/08/2024, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 2500)

$0.431

(exc. GST)

$0.474

(inc. GST)

Units	Per unit	Per Reel*
2500 - 10000	$0.431	$1,077.50
12500 +	$0.388	$970.00

*price indicative

RS Stock No.:: 166-2636
Mfr. Part No.:: FQD13N10LTM
Brand:: onsemi

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	10 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Series	QFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	180 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	8.7 nC @ 5 V
Length	6.6mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	6.1mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	2.3mm