N-Channel MOSFET, 15 A, 30 V, 8-Pin SOIC onsemi FDS8896
- RS Stock No.:
- 166-2626
- Mfr. Part No.:
- FDS8896
- Brand:
- onsemi
2495 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 2500)
$0.473
(exc. GST)
$0.52
(inc. GST)
Units | Per unit | Per Reel* |
---|---|---|
2500 - 2500 | $0.473 | $1,182.50 |
5000 - 7500 | $0.462 | $1,155.00 |
10000 + | $0.454 | $1,135.00 |
*price indicative
- RS Stock No.:
- 166-2626
- Mfr. Part No.:
- FDS8896
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 15 A |
Maximum Drain Source Voltage | 30 V |
Package Type | SOIC |
Series | PowerTrench |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 6 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 2.5 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 4mm |
Typical Gate Charge @ Vgs | 50 nC @ 10 V |
Length | 5mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Height | 1.5mm |
Minimum Operating Temperature | -55 °C |
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