N-Channel MOSFET, 37 A, 150 V, 3-Pin D2PAK onsemi FDB2552
- RS Stock No.:
- 166-2548
- Mfr. Part No.:
- FDB2552
- Brand:
- onsemi
740 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 800)
$1.698
(exc. GST)
$1.868
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | $1.698 | $1,358.40 |
| 1600 - 2400 | $1.655 | $1,324.00 |
| 3200 + | $1.63 | $1,304.00 |
*price indicative
- RS Stock No.:
- 166-2548
- Mfr. Part No.:
- FDB2552
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Automotive N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 37 A |
| Maximum Drain Source Voltage | 150 V |
| Series | PowerTrench |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 97 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V |
| Length | 10.67mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 11.33mm |
| Height | 4.83mm |
| Minimum Operating Temperature | -55 °C |
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