P-Channel MOSFET, 27 A, 60 V, 3-Pin D2PAK onsemi FQB27P06TM

RS Stock No.:: 166-1749
Mfr. Part No.:: FQB27P06TM
Brand:: onsemi

P-Channel MOSFET, 27 A, 60 V, 3-Pin D2PAK onsemi FQB27P06TM

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Added

Price (ex. GST) Each (On a Reel of 800)

$1.446

(exc. GST)

$1.591

(inc. GST)

Units	Per unit	Per Reel*
800 - 3200	$1.446	$1,156.80
4000 +	$1.302	$1,041.60
*price indicative

RS Stock No.:: 166-1749
Mfr. Part No.:: FQB27P06TM
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:

• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	27 A
Maximum Drain Source Voltage	60 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	3.75 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Number of Elements per Chip	1
Width	9.65mm
Length	10.67mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	33 nC @ 10 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	4.83mm