Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90N03S4L03ATMA1
- RS Stock No.:
- 166-1127
- Mfr. Part No.:
- IPD90N03S4L03ATMA1
- Brand:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 2500 units)*
$2,667.50
(exc. GST)
$2,935.00
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | $1.067 | $2,667.50 |
*price indicative
- RS Stock No.:
- 166-1127
- Mfr. Part No.:
- IPD90N03S4L03ATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS™ -T2 | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 94 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Length | 6.5mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Width | 6.22mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Height | 2.3mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ -T2 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 94 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Length 6.5mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Width 6.22mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 2.3mm | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- MY
Infineon OptiMOS™ T2 Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
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