Dual N-Channel MOSFET, 260 mA, 30 V, 6-Pin SOT-363 Diodes Inc DMN63D8LDW-7

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Bulk discount available

Subtotal (1 reel of 3000 units)**

$207.00

(exc. GST)

$228.00

(inc. GST)

On back order for despatch 04/04/2025, delivery within 10 working days from despatch date.*

* Delivery dates may change based on your chosen quantity and delivery address.

**price indicative

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	N
	Maximum Continuous Drain Current	260 mA
	Maximum Drain Source Voltage	30 V
	Package Type	SOT-363
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	13 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.5V
	Maximum Power Dissipation	400 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	1.35mm
	Number of Elements per Chip	2
	Length	2.2mm
	Typical Gate Charge @ Vgs	0.87 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	1mm

	Select all
	Brand DiodesZetex
	Channel Type N
	Maximum Continuous Drain Current 260 mA
	Maximum Drain Source Voltage 30 V
	Package Type SOT-363
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 13 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.5V
	Maximum Power Dissipation 400 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Width 1.35mm
	Number of Elements per Chip 2
	Length 2.2mm
	Typical Gate Charge @ Vgs 0.87 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 1mm

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