N-Channel MOSFET, 59 A, 100 V, 3-Pin TO-220AB Infineon IRF3710ZPBF

RS Stock No.:: 165-7604
Mfr. Part No.:: IRF3710ZPBF
Brand:: Infineon

N-Channel MOSFET, 59 A, 100 V, 3-Pin TO-220AB Infineon IRF3710ZPBF

This image is representative of the product range

1300 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Tube of 50)

$1.756

(exc. GST)

$1.932

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$1.756	$87.80
250 +	$1.58	$79.00
*price indicative

RS Stock No.:: 165-7604
Mfr. Part No.:: IRF3710ZPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	59 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	18 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	160 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	4.69mm
Typical Gate Charge @ Vgs	82 nC @ 10 V
Length	10.54mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Height	8.77mm
Minimum Operating Temperature	-55 °C