P-Channel MOSFET, 38 A, 100 V, 3-Pin I2PAK Infineon IRF5210LPBF

RS Stock No.:: 165-7567
Mfr. Part No.:: IRF5210LPBF
Brand:: Infineon

P-Channel MOSFET, 38 A, 100 V, 3-Pin I2PAK Infineon IRF5210LPBF

This image is representative of the product range

20 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Tube of 50)

$5.219

(exc. GST)

$5.741

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$5.219	$260.95
250 +	$4.697	$234.85

*price indicative

RS Stock No.:: 165-7567
Mfr. Part No.:: IRF5210LPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	38 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	I2PAK (TO-262)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Width	4.69mm
Length	10.54mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	150 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	10.54mm