N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS
- RS Stock No.:
- 162-8558
- Mfr. Part No.:
- CSD19506KCS
- Brand:
- Texas Instruments
150 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Tube of 50)
$6.237
(exc. GST)
$6.861
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 50 | $6.237 | $311.85 |
| 100 - 150 | $6.081 | $304.05 |
| 200 + | $5.988 | $299.40 |
| *price indicative | ||
- RS Stock No.:
- 162-8558
- Mfr. Part No.:
- CSD19506KCS
- Brand:
- Texas Instruments
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
N-Channel NexFET™ Power MOSFET, Texas Instruments
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Texas Instruments
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 273 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | TO-220 |
| Series | NexFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.2V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.7mm |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 16.51mm |