IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268

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RS Stock No.:
146-4378
Distrelec Article No.:
302-53-402
Mfr. Part No.:
IXFT60N65X2HV
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-268

Series

HiperFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

108nC

Maximum Power Dissipation Pd

780W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

16.05mm

Width

15.15 mm

Height

5.1mm

Automotive Standard

No

Distrelec Product Id

30253402

Low RDS(ON) and Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

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Higher efficiency

High power density

Easy to mount

Space savings

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