N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 Infineon IRFP7530PBF

RS Stock No.:: 145-9658
Mfr. Part No.:: IRFP7530PBF
Brand:: Infineon

N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 Infineon IRFP7530PBF

This image is representative of the product range

600 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Tube of 25)

$4.491

(exc. GST)

$4.94

(inc. GST)

Units	Per unit	Per Tube*
25 - 100	$4.491	$112.275
125 +	$4.042	$101.05
*price indicative

RS Stock No.:: 145-9658
Mfr. Part No.:: IRFP7530PBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low R_DS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	195 A
Maximum Drain Source Voltage	60 V
Series	StrongIRFET
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	341 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	274 nC @ 10 V
Number of Elements per Chip	1
Length	15.87mm
Width	5.31mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	20.7mm