P-Channel MOSFET, 120 A, 40 V, 3-Pin TO-220 Infineon IPP120P04P4L03AKSA1

RS Stock No.:: 145-9267
Mfr. Part No.:: IPP120P04P4L03AKSA1
Brand:: Infineon

P-Channel MOSFET, 120 A, 40 V, 3-Pin TO-220 Infineon IPP120P04P4L03AKSA1

This image is representative of the product range

1500 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Tube of 50)

$4.54

(exc. GST)

$4.99

(inc. GST)

Units	Per unit	Per Tube*
50 - 100	$4.54	$227.00
150 - 200	$4.426	$221.30
250 +	$4.358	$217.90

*price indicative

RS Stock No.:: 145-9267
Mfr. Part No.:: IPP120P04P4L03AKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	40 V
Package Type	TO-220
Series	OptiMOS P
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	5.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	136 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Operating Temperature	+175 °C
Length	10mm
Typical Gate Charge @ Vgs	180 nC @ 10 V
Transistor Material	Si
Number of Elements per Chip	1
Width	4.4mm
Minimum Operating Temperature	-55 °C
Height	15.65mm