N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 Infineon IPP032N06N3GXKSA1

RS Stock No.:: 145-8902
Mfr. Part No.:: IPP032N06N3GXKSA1
Brand:: Infineon

N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 Infineon IPP032N06N3GXKSA1

This image is representative of the product range

305 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Tube of 50)

$2.26

(exc. GST)

$2.49

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$2.26	$113.00
250 +	$2.034	$101.70

*price indicative

RS Stock No.:: 145-8902
Mfr. Part No.:: IPP032N06N3GXKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	60 V
Series	OptiMOS™ 3
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	188 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	124 nC @ 10 V
Length	10.36mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	4.57mm
Minimum Operating Temperature	-55 °C
Height	15.95mm
Forward Diode Voltage	1.2V