N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 Infineon IPW60R165CPFKSA1

RS Stock No.:: 145-8593
Mfr. Part No.:: IPW60R165CPFKSA1
Brand:: Infineon

N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 Infineon IPW60R165CPFKSA1

This image is representative of the product range

90 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Tube of 30)

$7.343

(exc. GST)

$8.077

(inc. GST)

Units	Per unit	Per Tube*
30 - 120	$7.343	$220.29
150 +	$6.609	$198.27
*price indicative

RS Stock No.:: 145-8593
Mfr. Part No.:: IPW60R165CPFKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

Infineon CoolMOS™CP Power MOSFET

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	21 A
Maximum Drain Source Voltage	650 V
Series	CoolMOS CP
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	160 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	192 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	16.13mm
Number of Elements per Chip	1
Width	5.21mm
Typical Gate Charge @ Vgs	39 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	21.1mm
Forward Diode Voltage	1.2V