C2M0040120D SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed

  • RS Stock No. 145-5875
  • Mfr. Part No. C2M0040120D
  • Manufacturer Wolfspeed
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 60 A
Maximum Drain Source Voltage 1200 V
Maximum Drain Source Resistance 52 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage -5 V, +20 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 330 W
Height 21.1mm
Typical Gate Charge @ Vgs 115 nC @ 20 V, 115 nC @ 5 V
Length 16.13mm
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Typical Input Capacitance @ Vds 1893 pF @ 1000 V
Maximum Operating Temperature +150 °C
Transistor Material SiC
Typical Turn-On Delay Time 15 ns
Dimensions 16.13 x 5.21 x 21.1mm
Forward Diode Voltage 3.3V
Width 5.21mm
Typical Turn-Off Delay Time 26 ns
Forward Transconductance 15.1S
240 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 30)
$ 57.185
(exc. GST)
$ 62.903
(inc. GST)
units
Per unit
Per Tube*
30 +
$57.185
$1,715.55
*price indicative
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