onsemi PowerTrench N-Channel MOSFET, 211 A, 80 V, 3-Pin TO-220 FDP032N08B_F102
- RS Stock No.:
- 145-5484
- Mfr. Part No.:
- FDP032N08B_F102
- Brand:
- onsemi
This image is representative of the product range
Subtotal (1 tube of 50 units)*
$146.25
(exc. GST)
$160.90
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | $2.925 | $146.25 |
*price indicative
- RS Stock No.:
- 145-5484
- Mfr. Part No.:
- FDP032N08B_F102
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 211 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | PowerTrench | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.3 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 263 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.36mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.672mm | |
| Typical Gate Charge @ Vgs | 111 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.215mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 211 A | ||
Maximum Drain Source Voltage 80 V | ||
Series PowerTrench | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.3 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 263 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.36mm | ||
Maximum Operating Temperature +175 °C | ||
Width 4.672mm | ||
Typical Gate Charge @ Vgs 111 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 15.215mm | ||
- COO (Country of Origin):
- US
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