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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	211 A
	Maximum Drain Source Voltage	80 V
	Series	PowerTrench
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	3.3 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	263 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	111 nC @ 10 V
	Length	10.36mm
	Width	4.672mm
	Height	15.215mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 211 A
	Maximum Drain Source Voltage 80 V
	Series PowerTrench
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 3.3 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 263 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 111 nC @ 10 V
	Length 10.36mm
	Width 4.672mm
	Height 15.215mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: US

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench N-Channel MOSFET, 211 A, 80 V, 3-Pin TO-220 FDP032N08B_F102

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

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