N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-220F onsemi FQPF9N90CT

RS Stock No.:: 145-4390
Mfr. Part No.:: FQPF9N90CT
Brand:: onsemi

N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-220F onsemi FQPF9N90CT

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Price (ex. GST) Each (In a Tube of 50)

$5.044

(exc. GST)

$5.548

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$5.044	$252.20
250 +	$4.539	$226.95

*price indicative

RS Stock No.:: 145-4390
Mfr. Part No.:: FQPF9N90CT
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	8 A
Maximum Drain Source Voltage	900 V
Package Type	TO-220F
Series	QFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	68 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	45 nC @ 10 V
Number of Elements per Chip	1
Width	4.9mm
Length	10.36mm
Transistor Material	Si
Height	16.07mm
Minimum Operating Temperature	-55 °C