ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
- RS Stock No.:
- 144-2259
- Mfr. Part No.:
- BSM180D12P3C007
- Brand:
- ROHM
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Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
$1,170.76
(exc. GST)
$1,287.84
(inc. GST)
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Temporarily out of stock
- Shipping from 19 January 2027
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Units | Per unit |
|---|---|
| 1 - 3 | $1,170.76 |
| 4 - 7 | $1,153.19 |
| 8 + | $1,123.39 |
*price indicative
- RS Stock No.:
- 144-2259
- Mfr. Part No.:
- BSM180D12P3C007
- Brand:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Series | BSM | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 17mm | |
| Length | 122mm | |
| Width | 45.6mm | |
| Number of Elements per Chip | 2 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Series BSM | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 17mm | ||
Length 122mm | ||
Width 45.6mm | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
Related links
- ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
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- ROHM Half Bridge BSM Type N-Channel SiC Power Module 1200 V Enhancement, 4-Pin BSM120D12P2C005
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