N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1

RS Stock No.:: 133-9867
Mfr. Part No.:: IPAW60R600CEXKSA1
Brand:: Infineon

N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1

1 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 5)

$1.97

(exc. GST)

$2.17

(inc. GST)

Units	Per unit	Per Pack*
5 - 110	$1.97	$9.85
115 - 220	$1.918	$9.59
225 +	$1.89	$9.45

*price indicative

RS Stock No.:: 133-9867
Mfr. Part No.:: IPAW60R600CEXKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon CoolMOS™ CE Power MOSFET

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	10.3 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220 FP
Series	CoolMOS™ CE
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	28 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	11.3mm
Number of Elements per Chip	1
Width	4.9mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	20.5 nC @ 10 V
Minimum Operating Temperature	-40 °C
Forward Diode Voltage	0.9V
Height	16.27mm