P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 onsemi FQT5P10TF

RS Stock No.:: 124-1723
Mfr. Part No.:: FQT5P10TF
Brand:: onsemi

P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 onsemi FQT5P10TF

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This product is currently unavailable to backorder.

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Price (ex. GST) Each (On a Reel of 4000)

$0.435

(exc. GST)

$0.479

(inc. GST)

Units	Per unit	Per Reel*
4000 - 4000	$0.435	$1,740.00
8000 - 12000	$0.424	$1,696.00
16000 +	$0.417	$1,668.00

*price indicative

RS Stock No.:: 124-1723
Mfr. Part No.:: FQT5P10TF
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1 A
Maximum Drain Source Voltage	100 V
Package Type	SOT-223
Series	QFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.05 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	3.56mm
Number of Elements per Chip	1
Length	6.5mm
Transistor Material	Si
Typical Gate Charge @ Vgs	6.3 nC @ 10 V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1.6mm