Infineon CoolGaN N channel-Channel Power Transistor, 30 A, 650 V Enhancement, 9-Pin PG-HDSOP-16 IGLT65R110B2AUMA1
- RS Stock No.:
- 762-901
- Mfr. Part No.:
- IGLT65R110B2AUMA1
- Brand:
- Infineon
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
$13.14
(exc. GST)
$14.45
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- Plus 1,800 unit(s) shipping from 04 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | $13.14 |
| 10 - 49 | $10.65 |
| 50 - 99 | $8.14 |
| 100 + | $6.54 |
*price indicative
- RS Stock No.:
- 762-901
- Mfr. Part No.:
- IGLT65R110B2AUMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N channel | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolGaN | |
| Package Type | PG-HDSOP-16 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 55W | |
| Typical Gate Charge Qg @ Vgs | 1.61nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | -10V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 10.1mm | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N channel | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolGaN | ||
Package Type PG-HDSOP-16 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 55W | ||
Typical Gate Charge Qg @ Vgs 1.61nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs -10V | ||
Maximum Operating Temperature 150°C | ||
Length 10.3mm | ||
Standards/Approvals RoHS Compliant | ||
Width 10.1mm | ||
Height 2.35mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolGaN Bi-Directional Switch (BDS) utilizes gallium nitride technology to provide efficient voltage blocking in both directions. It integrates substrate voltage control, simplifying design for various industrial applications. The IGLT65R110B2 model is housed in a TOLT package, optimized for high power density.
Optimized for soft switching operation
Dual‑gate for independent bi‑directional functionality
Superior performance
Versatile for diverse industrial applications
Related links
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R080D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R055D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R140D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R110D2XUMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R075M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R036M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R011M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R015M2HXTMA1