Vishay SiH N channel-Channel MOSFET, 40 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SiHK055N60EF

N

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

$20.94

(exc. GST)

$23.03

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 20 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9$20.94
10 - 49$12.98
50 - 99$10.04
100 +$6.77

*price indicative

RS Stock No.:
735-158
Mfr. Part No.:
SiHK055N60EF
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Series

SiH

Package Type

PowerPAK 10 x 12

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.05Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

236W

Forward Voltage Vf

600V

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

60nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

10mm

Length

13mm

Standards/Approvals

RoHS

Height

2mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

Related links