ROHM AW2K21 N-Channel Single MOSFETs, 20 A, 30 V Enhancement, 22-Pin WLCSP-2020 AW2K21AR
- RS Stock No.:
- 687-361
- Mfr. Part No.:
- AW2K21AR
- Brand:
- ROHM
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 2 units)*
$6.25
(exc. GST)
$6.88
(inc. GST)
FREE delivery for orders over $80.00 ex GST
Temporarily out of stock
- Shipping from 17 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | $3.125 | $6.25 |
| 20 - 48 | $2.76 | $5.52 |
| 50 - 198 | $2.475 | $4.95 |
| 200 - 998 | $2.01 | $4.02 |
| 1000 + | $1.95 | $3.90 |
*price indicative
- RS Stock No.:
- 687-361
- Mfr. Part No.:
- AW2K21AR
- Brand:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WLCSP-2020 | |
| Series | AW2K21 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 4.0mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.6W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5mm | |
| Length | 20mm | |
| Standards/Approvals | RoHS | |
| Width | 20mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WLCSP-2020 | ||
Series AW2K21 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 4.0mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.6W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 150°C | ||
Height 5mm | ||
Length 20mm | ||
Standards/Approvals RoHS | ||
Width 20mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET is engineered for optimal performance in high-efficiency applications. This Nch common source MOSFET supports a maximum drain-to-source voltage of 30V and a continuous drain current of ±20A, making it an ideal choice for load switching and protection functionalities. This device is also compliant with RoHS standards, contributing to environmentally friendly design practices in modern electronics.
Low on resistance of 4.0mΩ maximises power efficiency
High power capacity with a power dissipation rating of 1.6W
Optimised for small package applications with a WLCSP design
Pb free lead plating enhances solderability and environmental compliance
Backside coating reduces the risk of corrosion and improves durability
Wide operating temperature range from -55°C to +150°C ensures reliability in varied conditions
Includes ESD protection features to safeguard against static discharge
Related links
- ROHM R4P Type N-Channel Single MOSFETs 3-Pin MPT3 R4P030N03HZGT100
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R080D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R140D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R110D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R055D2XUMA1
- Vishay SIRA14DDP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK SIRA14DDP-T1-GE3
- Vishay SIRA18DDP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK SIRA18DDP-T1-GE3
- Vishay SIRA10DDP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK SIRA10DDP-T1-GE3