P-Channel MOSFET, 2.5 A, 200 V, 3-Pin PW Mold2 Toshiba 2SJ680(Q)
- RS Stock No.:
- 362-816P
- Mfr. Part No.:
- 2SJ680(Q)
- Brand:
- Toshiba
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RS will no longer stock this product.
- RS Stock No.:
- 362-816P
- Mfr. Part No.:
- 2SJ680(Q)
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.5 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | PW Mold2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 20 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V | |
| Length | 6.5mm | |
| Width | 2.3mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 5.5mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type PW Mold2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 20 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V | ||
Length 6.5mm | ||
Width 2.3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 5.5mm | ||
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