STMicroelectronics N-Channel STL160 Type N-Channel MOSFET, 160 A, 60 V Enhancement, 8-Pin PowerFLAT
- RS Stock No.:
- 358-984
- Mfr. Part No.:
- STL160N6LF7
- Brand:
- STMicroelectronics
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$2.78
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$3.06
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In Stock
- 250 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | $2.78 |
| 10 - 99 | $2.51 |
| 100 - 499 | $2.31 |
| 500 - 999 | $2.14 |
| 1000 + | $1.92 |
*price indicative
- RS Stock No.:
- 358-984
- Mfr. Part No.:
- STL160N6LF7
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Operating Frequency | 1 MHz | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Output Power | 125W | |
| Series | STL160 | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 175°C | |
| Length | 4.8mm | |
| Standards/Approvals | JEDEC | |
| Width | 6.1 mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Operating Frequency 1 MHz | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 60V | ||
Output Power 125W | ||
Series STL160 | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 175°C | ||
Length 4.8mm | ||
Standards/Approvals JEDEC | ||
Width 6.1 mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET, based on STripFET F7 technology, delivers exceptionally low on-state resistance (RDS(on)) for enhanced efficiency. Its design ensures reduced capacitance and gate charge, enabling Faster and more efficient switching with excellent EMI immunity.
Excellent FoM
Low Crss by Ciss ratio for EMI immunity
High avalanche ruggedness
Logic level VGS
Related links
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