Infineon IPT0 Type N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1

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Subtotal (1 pack of 2 units)*

$23.20

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$25.52

(inc. GST)

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Units
Per unit
Per Pack*
2 - 18$11.60$23.20
20 - 198$10.45$20.90
200 +$9.635$19.27

*price indicative

RS Stock No.:
351-906
Mfr. Part No.:
IPT017N10NM5LF2ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

321A

Maximum Drain Source Voltage Vds

100V

Package Type

PG-HSOF-8

Series

IPT0

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

165nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

10.1 mm

Standards/Approvals

Halogen-Free (IEC61249-2-21), RoHS, JEDEC

Length

10.58mm

Height

1.30mm

Automotive Standard

No

The Infineon Infineon’s best-in-class OptiMOS 5 Linear FET 2 100 V in TO-Leadless (TOLL), offering the industry’s lowest RDS(on) and wide SOA at 25˚C. The combination of the OptiMOS 5 Linear FET 2 technology and the TOLL package, It is designed to provide highest power density, for inrush current protection applications such as hot-swap, e-fuse, and within battery protection in Battery management systems (BMS).

Wide safe operating area (SOA)

Low RDS(on)

Lower IGSS compared to Linear FET

Optimized transfer characteristic

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