Microchip PD70224 Type N-Channel MOSFET, 2 A, 74 V, 40-Pin QFN PD70224ILQ-TR
- RS Stock No.:
- 333-012
- Mfr. Part No.:
- PD70224ILQ-TR
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
$12,242.00
(exc. GST)
$13,466.00
(inc. GST)
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | $6.121 | $12,242.00 |
*price indicative
- RS Stock No.:
- 333-012
- Mfr. Part No.:
- PD70224ILQ-TR
- Brand:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 74V | |
| Package Type | QFN | |
| Series | PD70224 | |
| Mount Type | Surface | |
| Pin Count | 40 | |
| Maximum Drain Source Resistance Rds | 0.26Ω | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 192mV | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | IEEE 802.3af and IEEE 802.3at, IEEE 802.3bt and PoH, RoHS | |
| Height | 1mm | |
| Length | 6mm | |
| Width | 8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 74V | ||
Package Type QFN | ||
Series PD70224 | ||
Mount Type Surface | ||
Pin Count 40 | ||
Maximum Drain Source Resistance Rds 0.26Ω | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 192mV | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals IEEE 802.3af and IEEE 802.3at, IEEE 802.3bt and PoH, RoHS | ||
Height 1mm | ||
Length 6mm | ||
Width 8 mm | ||
Automotive Standard No | ||
The Microchip Dual pack of MOSFET based full bridge rectifiers. It contains low Rds 0.16Ω N channel MOSFETs for much higher overall efficiency and higher output power, particularly when used in Powered Devices (PDs) for PoE applications. The entire drive circuitry for driving the MOSFETs is on chip, including a charge pump for driving the high side N channel MOSFETs.
Active circuit with low forward drop to replace dissipative passive diode bridges
Self contained drive circuitry for MOSFETs
Designed to support IEEE-802.3af / at / bt and PoH
Integrated 0.16 Ohm N channel MOSFETs for 0.3 Ohm total path resistance
Power present indicator signals for identifying 4 pair bridge power
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