Name: Infineon OptiMOS SiC N-Channel MOSFET, 381 A, 40 V, 8-Pin PG-WSON-8 BSC007N04LS6SCATMA1
Brand: Infineon
SKU: 284-634
Price: 4.87 AUD
Availability: BackOrder

The Infineon MOSFET is a power transistor for high performance applications requiring robust efficiency and reliability. With its dual side cooled packaging, it boasts the lowest junction to top thermal resistance, enabling superior heat dissipation. The N channel design ensures optimal performance in synchronous applications, making it an ideal choice for modern power management systems. Featuring a Pb free lead plating and RoHS compliance. Additionally, its high avalanche rating assures stability under demanding conditions, while the rated operating temperature up to 175 °C enhances its usability across various environments.

Seamless integration for synchronous applications
Meets JEDEC standards for industrial use
Advanced thermal management improves endurance
Exceptional on resistance for efficiency
Handles high avalanche energy reliably
Supports halogen free and eco conscious design

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	381 A
	Maximum Drain Source Voltage	40 V
	Series	OptiMOS
	Package Type	PG-WSON-8
	Mounting Type	Surface Mount
	Pin Count	8
	Channel Mode	Enhancement
	Transistor Material	SiC
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 381 A
	Maximum Drain Source Voltage 40 V
	Series OptiMOS
	Package Type PG-WSON-8
	Mounting Type Surface Mount
	Pin Count 8
	Channel Mode Enhancement
	Transistor Material SiC
	Number of Elements per Chip 1

Infineon OptiMOS SiC N-Channel MOSFET, 381 A, 40 V, 8-Pin PG-WSON-8 BSC007N04LS6SCATMA1

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