Nexperia PSM Type N-Channel MOSFET, 200 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R7-40YLBX

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$2.45

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$2.70

(inc. GST)

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1 - 9$2.45
10 - 99$2.21
100 - 499$2.04
500 - 999$1.89
1000 +$1.69

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Packaging Options:
RS Stock No.:
219-503
Mfr. Part No.:
PSMN1R7-40YLBX
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

40V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

194W

Typical Gate Charge Qg @ Vgs

35nC

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. It is optimized to improve EMC performance by up to 6 dB. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, battery isolation, industrial load-switching, eFuse, and inrush management.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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