N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXYS IXFH120N20P

RS Stock No.:: 193-458
Mfr. Part No.:: IXFH120N20P
Brand:: IXYS

N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXYS IXFH120N20P

This image is representative of the product range

16 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each

$19.01

(exc. GST)

$20.91

(inc. GST)

Units	Per unit
1 - 7	$19.01
8 - 14	$19.00
15 +	$18.23

RS Stock No.:: 193-458
Mfr. Part No.:: IXFH120N20P
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	200 V
Series	HiperFET, Polar
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	22 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	714 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	152 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Width	5.3mm
Length	16.26mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	21.46mm