STMicroelectronics SuperMESH Dual N-Channel MOSFET, 0.4 A, 450 V Enhancement, 8-Pin SO-8 STS1DNC45

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 tape of 10 units)*

$26.56

(exc. GST)

$29.22

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 5,960 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tape*
10 - 90$2.656$26.56
100 - 240$2.522$25.22
250 - 490$2.34$23.40
500 - 990$2.148$21.48
1000 +$2.069$20.69

*price indicative

Packaging Options:
RS Stock No.:
151-447
Mfr. Part No.:
STS1DNC45
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

Dual N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.4A

Maximum Drain Source Voltage Vds

450V

Series

SuperMESH

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.5Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-65°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Standard outline for easy automated surface mount assembly

Gate charge minimized

Related links