onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 864-8855
Mfr. Part No.:: FGH40T120SMD
Brand:: onsemi

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

440 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each

$14.35

(exc. GST)

$15.79

(inc. GST)

Units	Per unit
1 - 7	$14.35
8 - 14	$14.00
15 +	$13.81

RS Stock No.:: 864-8855
Mfr. Part No.:: FGH40T120SMD
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±25V
Maximum Power Dissipation	555 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	15.87 x 4.82 x 20.82mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C