Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

$5.40

(exc. GST)

$5.94

(inc. GST)

Add to Basket
Select or type quantity
Last RS stock
  • Final 16 unit(s), ready to ship from another location
Units
Per unit
1 - 12$5.40
13 - 24$5.26
25 +$5.22

*price indicative

Packaging Options:
RS Stock No.:
796-5055
Mfr. Part No.:
GT20J341
Brand:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

45 W

Package Type

TO-220SIS

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

100kHz

Transistor Configuration

Single

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

IGBT Discretes, Toshiba


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links