STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

RS Stock No.:: 168-7156
Mfr. Part No.:: STGB10NC60HDT4
Brand:: STMicroelectronics

STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

This image is representative of the product range

On back order for despatch 22/11/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (On a Reel of 1000)

$1.571

(exc. GST)

$1.728

(inc. GST)

Units	Per unit	Per Reel*
1000 - 4000	$1.571	$1,571.00
5000 +	$1.52	$1,520.00
*price indicative

RS Stock No.:: 168-7156
Mfr. Part No.:: STGB10NC60HDT4
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

IGBT Discretes, STMicroelectronics

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	10 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	65 W
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	10.4 x 9.35 x 4.6mm
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+150 °C