STMicroelectronics STGF20V60DF IGBT, 40 A 600 V, 3-Pin TO-220, Through Hole

RS Stock No.:: 791-9342
Mfr. Part No.:: STGF20V60DF
Brand:: STMicroelectronics

STMicroelectronics STGF20V60DF IGBT, 40 A 600 V, 3-Pin TO-220, Through Hole

This image is representative of the product range

Available for back order.

Added

Price (ex. GST) Each (In a Pack of 5)

$3.142

(exc. GST)

$3.456

(inc. GST)

Units	Per unit	Per Pack*
5 - 20	$3.142	$15.71
25 +	$3.106	$15.53
*price indicative

RS Stock No.:: 791-9342
Mfr. Part No.:: STGF20V60DF
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	40 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	167 W
Package Type	TO-220
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	10.4 x 4.6 x 15.75mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C